Structural and electrical behavior of tin doped ba0.6sr0.4tio3 thin films

×

Error message

User warning: The following theme is missing from the file system: journalijdr. For information about how to fix this, see the documentation page. in _drupal_trigger_error_with_delayed_logging() (line 1138 of /home2/journalijdr/public_html/includes/bootstrap.inc).

International Journal of Development Research

Structural and electrical behavior of tin doped ba0.6sr0.4tio3 thin films

Abstract: 

(Ba, Sr)TiO3 (BST) thin films doped with Tin were coated by sol-gel method on quartz and stainless steel substrates. The results of X-ray diffraction and FE-SEM analysis had shown that the grain size of BST thin films decreases with dopant concentration. Dielectric properties were investigated as a function of frequency. The dielectric constant and dielectric loss of BST thin films decreases with dopant concentration and was explained by electro negativity and oxygen vacancy factors. The retendivity of the specimen decreases while the coercive force increases with dopant concentration.

Download PDF: